Investigation of scalability for Ge and InGaAs channel multi-gate NMOSFETs

Yu Sheng Wu*, Chun Hsien Chiang, Pin Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Using a physical and predictive 2-D confinement model considering the impact of source/drain coupling on the potential well, this work investigates the scalability of Ge and InGaAs multi-gate NMOSFETs by exploring a wide design space with various aspect ratio (AR). Our study indicates that, for a given subthreshold swing, multi-gate devices with InGaAs channel are more scalable than the Ge counterpart because of the larger fin-width allowed. Since the quantum-confinement effect can improve the V th roll-off, Tri-gate (AR=1) with significant 2-D confinement effect exhibits better V th roll-off than FinFET (AR>1). In addition, the InGaAs devices exhibit better V th roll-off than the Ge devices.

Original languageEnglish
Title of host publication2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs
StatePublished - 16 Jul 2012
Event2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan
Duration: 23 Apr 201225 Apr 2012

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
CountryTaiwan
CityHsinchu
Period23/04/1225/04/12

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