Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing

R. V. Tominov, E. G. Zamburg, D. A. Khakhulin, V. S. Klimin, V. A. Smirnov, Ying-hao Chu, O. A. Ageev

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The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8±0.4 μm2 grain size and 7.3±5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9±0.4 V, and from LRS to HRS at 1.5±0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metal-oxide-film RRAM fabrication.

Original languageEnglish
Article number032023
JournalJournal of Physics: Conference Series
Issue number3
StatePublished - 23 Nov 2017
Event4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures - Saint-Petersburg, Russian Federation
Duration: 3 Apr 20176 Apr 2017

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