The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8±0.4 μm2 grain size and 7.3±5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9±0.4 V, and from LRS to HRS at 1.5±0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metal-oxide-film RRAM fabrication.
|Journal||Journal of Physics: Conference Series|
|State||Published - 23 Nov 2017|
|Event||4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures - Saint-Petersburg, Russian Federation|
Duration: 3 Apr 2017 → 6 Apr 2017