@inproceedings{e1e352923ac145cf9d12b9923aa1d3b6,
title = "Investigation of random telegraph noise amplitudes in hafnium oxide resistive memory devices",
abstract = "Statistical characterization of two-level random telegraph noise (RTN) amplitude distribution in a hafnium oxide resistive memory has been performed. We find that two-level RTN in HRS exhibits a large amplitude distribution tail, as compared to LRS. To investigate an RTN trap position in a hafnium oxide film, we measure the dependence of electron capture and emission times of RTN on applied read voltage. A correlation between an RTN trap position and RTN amplitude is found. A quasi-two-dimensional RTN amplitude simulation based on trap-assisted electron sequential tunneling is developed. Our study shows that RTN traps in a rupture region of a hafnium oxide film are responsible for an RTN large-amplitude tail in HRS mostly.",
keywords = "RRAM, RTN amplitudes, statistical characterization, trap position",
author = "Chung, {Y. T.} and Liu, {Y. H.} and Su, {P. C.} and Cheng, {Y. H.} and Ta-Hui Wang and Chen, {M. C.}",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/IRPS.2014.6861157",
language = "English",
isbn = "9781479933167",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",
address = "United States",
note = "null ; Conference date: 01-06-2014 Through 05-06-2014",
}