Investigation of random telegraph noise amplitudes in hafnium oxide resistive memory devices

Y. T. Chung, Y. H. Liu, P. C. Su, Y. H. Cheng, Ta-Hui Wang, M. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Statistical characterization of two-level random telegraph noise (RTN) amplitude distribution in a hafnium oxide resistive memory has been performed. We find that two-level RTN in HRS exhibits a large amplitude distribution tail, as compared to LRS. To investigate an RTN trap position in a hafnium oxide film, we measure the dependence of electron capture and emission times of RTN on applied read voltage. A correlation between an RTN trap position and RTN amplitude is found. A quasi-two-dimensional RTN amplitude simulation based on trap-assisted electron sequential tunneling is developed. Our study shows that RTN traps in a rupture region of a hafnium oxide film are responsible for an RTN large-amplitude tail in HRS mostly.

Original languageEnglish
Title of host publication2014 IEEE International Reliability Physics Symposium, IRPS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479933167
DOIs
StatePublished - 1 Jan 2014
Event52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States
Duration: 1 Jun 20145 Jun 2014

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference52nd IEEE International Reliability Physics Symposium, IRPS 2014
CountryUnited States
CityWaikoloa, HI
Period1/06/145/06/14

Keywords

  • RRAM
  • RTN amplitudes
  • statistical characterization
  • trap position

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