Investigation of random dopant fluctuation for multi-gate metal - oxide - semiconductor field-effect transistors using analytical solutions of three-dimensional poisson's equation

Yu Sheng Wu*, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

This paper investigates the random dopant fluctuation of multi-gate metal - oxide - semiconductor field-effect transistors (MOSFETs) using analytical solutions of three-dimensional (3D) Poisson's equation verified with device simulation. Especially, we analyze the impact of aspect ratio on the random dopant fluctuation in multi-gate devices. Our study indicates that with a given total width, lightly doped fin-type FET (FinFET) shows the smallest threshold voltage (Vth) dispersion because of its smaller Vth sensitivity to the channel doping. For heavily doped devices, quasi-planar shows smaller Vth, dispersion because of its larger volume. The V th, dispersion caused by random dopant fluctuation may still be significant in the lightly doped channel, especially for tri-gate and quasi-planar devices.

Original languageEnglish
Pages (from-to)2097-2102
Number of pages6
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 1
DOIs
StatePublished - 18 Apr 2008

Keywords

  • 3-D poisson's equation
  • FinFET
  • Multi-gate MOSFETs
  • Random dopant fluctuation
  • Tri-gate

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