Abstract
This paper investigates the random dopant fluctuation of multi-gate metal - oxide - semiconductor field-effect transistors (MOSFETs) using analytical solutions of three-dimensional (3D) Poisson's equation verified with device simulation. Especially, we analyze the impact of aspect ratio on the random dopant fluctuation in multi-gate devices. Our study indicates that with a given total width, lightly doped fin-type FET (FinFET) shows the smallest threshold voltage (Vth) dispersion because of its smaller Vth sensitivity to the channel doping. For heavily doped devices, quasi-planar shows smaller Vth, dispersion because of its larger volume. The V th, dispersion caused by random dopant fluctuation may still be significant in the lightly doped channel, especially for tri-gate and quasi-planar devices.
Original language | English |
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Pages (from-to) | 2097-2102 |
Number of pages | 6 |
Journal | Japanese journal of applied physics |
Volume | 47 |
Issue number | 4 PART 1 |
DOIs | |
State | Published - 18 Apr 2008 |
Keywords
- 3-D poisson's equation
- FinFET
- Multi-gate MOSFETs
- Random dopant fluctuation
- Tri-gate