Investigation of quantum-capacitance induced drain-current loss for multi-gate InGaAs n-MOSFETs

Hsin Hung Shen, Chang Hung Yu, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work investigates the quantum-capacitance induced drain-current loss for multi-gate In0.53Ga0.47As n-MOSFETs with tri-gate structure (fin aspect-ratio AR=1) and double-gate FinFET-like structure (AR>>1) through ITRS 2018-2024 technology nodes using quantum-mechanical simulation corroborated by model calculation. The quantum capacitance stemming from the small electron effective mass of InGaAs channel significantly degrades the intrinsic inversion capacitance and thus induces drain-current loss for multi-gate InGaAs devices. Our study indicates that the mobility enhancement of InGaAs devices (against Si counterparts) should be at least ∼3X and ∼2.5X, respectively, for tri-gate and FinFET-like structures to compensate the quantum-capacitance induced drain-current loss.

Original languageEnglish
Title of host publication2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973750
DOIs
StatePublished - 3 Jun 2015
Event2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan
Duration: 27 Apr 201529 Apr 2015

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2015-June
ISSN (Print)1930-8868

Conference

Conference2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
CountryTaiwan
CityHsinchu
Period27/04/1529/04/15

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