Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation

Hang Hu, Shi Jin Ding, Chunxiang Zhu, Subhash C. Rustagi, Y. F. Lu, M. F. Li, Byung Jin Cho, Daniel Sh Chan, M. B. Yu, Albert Chin, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this work we investigated the electrical characteristics of high-k PVD Hf02 metalinsulator- metal (MIM) capacitors from IF (10 kHz) to RF (20 GHz) frequency range. High-K Hf02 dielectric with two thicknesses of 22 and 47 nm were fabricated, the respective capacitance densities are 7.3 and 3.5 fFlμm2, and the two samples are denoted as HfO-1 to Hf0-2 in this paper. Fig. 1 presents the structure of PVD Hf0 2 MIM capacitors, the detailed fabrication process could be found elsewhere [1].

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages328-329
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
StatePublished - 1 Jan 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 10 Dec 200312 Dec 2003

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period10/12/0312/12/03

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