Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique

S. H. Gu*, M. T. Wang, C. T. Chan, N. K. Zous, C. C. Yeh, W. J. Tsai, T. C. Lu, Ta-Hui Wang, Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find programmed charge spreads further into the channel with program/erase cycle number.

Original languageEnglish
Article number1315428
Pages (from-to)639-640
Number of pages2
JournalIEEE International Reliability Physics Symposium Proceedings
Volume2004-January
Issue numberJanuary
DOIs
StatePublished - 12 Jul 2004
Event42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States
Duration: 25 Apr 200429 Apr 2004

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