The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find programmed charge spreads further into the channel with program/erase cycle number.
|Number of pages||2|
|Journal||IEEE International Reliability Physics Symposium Proceedings|
|State||Published - 12 Jul 2004|
|Event||42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States|
Duration: 25 Apr 2004 → 29 Apr 2004