Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions

H. C. Ma; J. P. Chiu; C. J. Tang; Ta-Hui Wang; C. S. Chang

doi:10.1109/IRPS.2009.5173223

Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions

H. C. Ma, J. P. Chiu, C. J. Tang, Ta-Hui Wang, C. S. Chang

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Bipolar charge detrapping induced current instability in HfSiON gate dielectric pMOSFETs after negative bias and temperature stress is studied by using a fast transient measurement technique. Both single electron and single hole emissions are observed, leading to post-stress current degradation and recovery, respectively. The NBT stress voltage and temperature effect on post-stress current evolution is explored. Clear evidence of electron and hole trapping in NBT stress is demonstrated. A bipolar charge trapping/detrapping model and charge detrapping paths based on measured charge emission times are proposed.

Original language	English
Title of host publication	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages	51-54
Number of pages	4
DOIs	https://doi.org/10.1109/IRPS.2009.5173223
State	Published - 12 Nov 2009
Event	2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada Duration: 26 Apr 2009 → 30 Apr 2009

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Country	Canada
City	Montreal, QC
Period	26/04/09 → 30/04/09

Access to Document

10.1109/IRPS.2009.5173223

Fingerprint Dive into the research topics of 'Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions'. Together they form a unique fingerprint.

Cite this

Ma, H. C., Chiu, J. P., Tang, C. J., Wang, T-H., & Chang, C. S. (2009). Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (pp. 51-54). [5173223] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173223

@inproceedings{70cfc8f281754f99a1d3493c290c797a,

title = "Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions",

abstract = "Bipolar charge detrapping induced current instability in HfSiON gate dielectric pMOSFETs after negative bias and temperature stress is studied by using a fast transient measurement technique. Both single electron and single hole emissions are observed, leading to post-stress current degradation and recovery, respectively. The NBT stress voltage and temperature effect on post-stress current evolution is explored. Clear evidence of electron and hole trapping in NBT stress is demonstrated. A bipolar charge trapping/detrapping model and charge detrapping paths based on measured charge emission times are proposed.",

author = "Ma, {H. C.} and Chiu, {J. P.} and Tang, {C. J.} and Ta-Hui Wang and Chang, {C. S.}",

year = "2009",

month = nov,

day = "12",

doi = "10.1109/IRPS.2009.5173223",

language = "English",

isbn = "0780388038",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "51--54",

booktitle = "2009 IEEE International Reliability Physics Symposium, IRPS 2009",

note = "null ; Conference date: 26-04-2009 Through 30-04-2009",

}

Ma, HC, Chiu, JP, Tang, CJ, Wang, T-H & Chang, CS 2009, Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions. in 2009 IEEE International Reliability Physics Symposium, IRPS 2009., 5173223, IEEE International Reliability Physics Symposium Proceedings, pp. 51-54, 2009 IEEE International Reliability Physics Symposium, IRPS 2009, Montreal, QC, Canada, 26/04/09. https://doi.org/10.1109/IRPS.2009.5173223

Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions. / Ma, H. C.; Chiu, J. P.; Tang, C. J.; Wang, Ta-Hui; Chang, C. S.

2009 IEEE International Reliability Physics Symposium, IRPS 2009. 2009. p. 51-54 5173223 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions

AU - Ma, H. C.

AU - Chiu, J. P.

AU - Tang, C. J.

AU - Wang, Ta-Hui

AU - Chang, C. S.

PY - 2009/11/12

Y1 - 2009/11/12

N2 - Bipolar charge detrapping induced current instability in HfSiON gate dielectric pMOSFETs after negative bias and temperature stress is studied by using a fast transient measurement technique. Both single electron and single hole emissions are observed, leading to post-stress current degradation and recovery, respectively. The NBT stress voltage and temperature effect on post-stress current evolution is explored. Clear evidence of electron and hole trapping in NBT stress is demonstrated. A bipolar charge trapping/detrapping model and charge detrapping paths based on measured charge emission times are proposed.

AB - Bipolar charge detrapping induced current instability in HfSiON gate dielectric pMOSFETs after negative bias and temperature stress is studied by using a fast transient measurement technique. Both single electron and single hole emissions are observed, leading to post-stress current degradation and recovery, respectively. The NBT stress voltage and temperature effect on post-stress current evolution is explored. Clear evidence of electron and hole trapping in NBT stress is demonstrated. A bipolar charge trapping/detrapping model and charge detrapping paths based on measured charge emission times are proposed.

UR - http://www.scopus.com/inward/record.url?scp=70449129815&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2009.5173223

DO - 10.1109/IRPS.2009.5173223

M3 - Conference contribution

AN - SCOPUS:70449129815

SN - 0780388038

SN - 9780780388031

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 51

EP - 54

BT - 2009 IEEE International Reliability Physics Symposium, IRPS 2009

Y2 - 26 April 2009 through 30 April 2009

ER -

Ma HC, Chiu JP, Tang CJ, Wang T-H, Chang CS. Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009. 2009. p. 51-54. 5173223. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173223