Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions

H. C. Ma, J. P. Chiu, C. J. Tang, Ta-Hui Wang, C. S. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Bipolar charge detrapping induced current instability in HfSiON gate dielectric pMOSFETs after negative bias and temperature stress is studied by using a fast transient measurement technique. Both single electron and single hole emissions are observed, leading to post-stress current degradation and recovery, respectively. The NBT stress voltage and temperature effect on post-stress current evolution is explored. Clear evidence of electron and hole trapping in NBT stress is demonstrated. A bipolar charge trapping/detrapping model and charge detrapping paths based on measured charge emission times are proposed.

Original languageEnglish
Title of host publication2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages51-54
Number of pages4
DOIs
StatePublished - 12 Nov 2009
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
Duration: 26 Apr 200930 Apr 2009

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2009 IEEE International Reliability Physics Symposium, IRPS 2009
CountryCanada
CityMontreal, QC
Period26/04/0930/04/09

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