Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance

Jia Ren Lee, Chien Rong Lu*, Wei-I Lee, Shih Chang Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

We studied self-assembled InAs/GaAs quantum dots by contrasting photoluminescence and photoreflectance spectra from 10 K to room temperature. The photoluminescence spectral profiles comprise contributions from four equally separated energy levels of InAs quantum dots. The emission profiles involving ground state and excited states have different temperature evolution. Abnormal spectral narrowing occurred above 200 K. In the photoreflectance spectra, major features corresponding to the InAs wetting layer and GaAs layers were observed. Temperature dependences of spectral intensities of these spectral features indicate that they originate from different photon-induced modulation mechanisms. Considering interband transitions of quantum dots were observed in photoluminescence spectra and those of wetting layer were observed in photoreflectance profiles, we propose that quantum dot states of the system are occupied up to the fourth energy level which is below the wetting layer quantum state.

Original languageEnglish
Pages (from-to)562-568
Number of pages7
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume25
Issue number4
DOIs
StatePublished - 1 Jan 2005

Keywords

  • InAs/GaAs
  • Photoluminescence
  • Photoreflectance
  • Quantum dots

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