Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

Chien Liu, Chia Chi Fan, Chih Yang Tseng, Hsiao Hsuan Hsu, Chun Hu Cheng, Yen Liang Chen, Chun Yen Chang, Wu-Ching Chou, Chien Liang Lin, Yu Chi Fan, Tsung Ming Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAlO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAlO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.

Original languageEnglish
Title of host publication2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
EditorsTing-Ao Tang, Fan Ye, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538644409
DOIs
StatePublished - 5 Dec 2018
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: 31 Oct 20183 Nov 2018

Publication series

Name2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
CountryChina
CityQingdao
Period31/10/183/11/18

Fingerprint Dive into the research topics of 'Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides'. Together they form a unique fingerprint.

Cite this