Investigation of photo-induced leakage on low-k hydrogen silsesquioxane for active matrix liquid crystal display technology

Po-Tsun Liu*, Bin Lin Liu, T. M. Tsai, C. W. Chen, T. C. Chang, You Lin Wu, J. K. Lee, Grace Chen, Eric Tsai, Joe Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Summary form only given. Flat panel liquid crystal display (LCD) has been received much interest due to its light weight, smaller volume, and large area when compared with the conventional cathode-ray-tube (CRT) display. Thin film transistors (TFTs) has been used as the driver and switch elements and become indispensable in active matrix LCD display. In the conventional TFT pixel design, due to using silicon nitride as a passivation layer, edges of the pixel electrodes are retracted from the gate and data signal lines to minimize the coupling capacitance which causes cross-talk and signal distortion. Thus, black matrix (BM) will cover relatively larger inactive areas, leading to a decreased aperture ratio. The adoption of low-dielectric-constant (low-k) films for TFT passivation layer can effectively increase the aperture ration of display matrix, reducing resistance-capacitance (RC) delay, exhibiting high optical transparency, and good planarization properties.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Number of pages1
DOIs
StatePublished - 26 Oct 2004
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: 26 Oct 200429 Oct 2004

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2004

Conference

Conference2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period26/10/0429/10/04

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