Investigation of photo-induced leakage on low-k hydrogen silsesquioxane for active matrix liquid crystal display technology

Po-Tsun Liu*, Bin Lin Liu, T. M. Tsai, C. W. Chen, T. C. Chang, You Lin Wu, J. K. Lee, Grace Chen, Eric Tsai, Joe Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The photo-induced leakage on low-k dielectrics, hydrogen silsesquioxane (HSQ) was investigated for thin film transistors (TFT) active array technology application. It was found that the dangling bonds in HSQ films were easy to form electric trap centers and enhance electric leaky. The photo-induced leakage current of HSQ was significantly increased after O 2-plasma process. The results show that the low dielectric constant and low leakage current of HSQ film were achieved by H 2-plasma pre-treatment.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Number of pages1
DOIs
StatePublished - 1 Dec 2004
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: 26 Oct 200429 Oct 2004

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2004

Conference

Conference2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period26/10/0429/10/04

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