Investigation of oxide charge trapping and detrapping in a n-MOSFET

Ta-Hui Wang*, Tse En Chang, L. P. Chiang, N. K. Zous, C. Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Oxide hole and electron trapping/detrapping characteristics in a hot carrier stressed n-MOSFET were investigated by monitoring the temporal evolution of band-to-band tunneling current. Both the hole and electron detrapping induced GIDL current transients were observed for the first time in the same device. The obtained field dependence of oxide charge detrapping time indicates that trapezoidal barrier tunneling is a major mechanism in both hole and electron detrapping. A trap assisted sequential tunneling model for hole detrapping was used to match the measured trap time constants.

Original languageEnglish
Pages (from-to)164-169
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA
Duration: 8 Apr 199710 Apr 1997

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