Oxide hole and electron trapping/detrapping characteristics in a hot carrier stressed n-MOSFET were investigated by monitoring the temporal evolution of band-to-band tunneling current. Both the hole and electron detrapping induced GIDL current transients were observed for the first time in the same device. The obtained field dependence of oxide charge detrapping time indicates that trapezoidal barrier tunneling is a major mechanism in both hole and electron detrapping. A trap assisted sequential tunneling model for hole detrapping was used to match the measured trap time constants.
|Number of pages||6|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA|
Duration: 8 Apr 1997 → 10 Apr 1997