Investigation of oxide charge trapping and detrapping in a n-MOSFET

Ta-Hui Wang; Tse En Chang; L. P. Chiang; N. K. Zous; C. Huang

doi:10.1109/RELPHY.1997.584254

Investigation of oxide charge trapping and detrapping in a n-MOSFET

Ta-Hui Wang^*, Tse En Chang, L. P. Chiang, N. K. Zous, C. Huang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Oxide hole and electron trapping/detrapping characteristics in a hot carrier stressed n-MOSFET were investigated by monitoring the temporal evolution of band-to-band tunneling current. Both the hole and electron detrapping induced GIDL current transients were observed for the first time in the same device. The obtained field dependence of oxide charge detrapping time indicates that trapezoidal barrier tunneling is a major mechanism in both hole and electron detrapping. A trap assisted sequential tunneling model for hole detrapping was used to match the measured trap time constants.

Original language	English
Pages (from-to)	164-169
Number of pages	6
Journal	Annual Proceedings - Reliability Physics (Symposium)
DOIs	https://doi.org/10.1109/RELPHY.1997.584254
State	Published - 1 Jan 1997
Event	Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA Duration: 8 Apr 1997 → 10 Apr 1997

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title = "Investigation of oxide charge trapping and detrapping in a n-MOSFET",

abstract = "Oxide hole and electron trapping/detrapping characteristics in a hot carrier stressed n-MOSFET were investigated by monitoring the temporal evolution of band-to-band tunneling current. Both the hole and electron detrapping induced GIDL current transients were observed for the first time in the same device. The obtained field dependence of oxide charge detrapping time indicates that trapezoidal barrier tunneling is a major mechanism in both hole and electron detrapping. A trap assisted sequential tunneling model for hole detrapping was used to match the measured trap time constants.",

author = "Ta-Hui Wang and Chang, {Tse En} and Chiang, {L. P.} and Zous, {N. K.} and C. Huang",

year = "1997",

month = jan,

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doi = "10.1109/RELPHY.1997.584254",

language = "English",

pages = "164--169",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

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note = "null ; Conference date: 08-04-1997 Through 10-04-1997",

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T1 - Investigation of oxide charge trapping and detrapping in a n-MOSFET

AU - Wang, Ta-Hui

AU - Chang, Tse En

AU - Chiang, L. P.

AU - Zous, N. K.

AU - Huang, C.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Oxide hole and electron trapping/detrapping characteristics in a hot carrier stressed n-MOSFET were investigated by monitoring the temporal evolution of band-to-band tunneling current. Both the hole and electron detrapping induced GIDL current transients were observed for the first time in the same device. The obtained field dependence of oxide charge detrapping time indicates that trapezoidal barrier tunneling is a major mechanism in both hole and electron detrapping. A trap assisted sequential tunneling model for hole detrapping was used to match the measured trap time constants.

AB - Oxide hole and electron trapping/detrapping characteristics in a hot carrier stressed n-MOSFET were investigated by monitoring the temporal evolution of band-to-band tunneling current. Both the hole and electron detrapping induced GIDL current transients were observed for the first time in the same device. The obtained field dependence of oxide charge detrapping time indicates that trapezoidal barrier tunneling is a major mechanism in both hole and electron detrapping. A trap assisted sequential tunneling model for hole detrapping was used to match the measured trap time constants.

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U2 - 10.1109/RELPHY.1997.584254

DO - 10.1109/RELPHY.1997.584254

M3 - Conference article

AN - SCOPUS:0030698543

SP - 164

EP - 169

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

Y2 - 8 April 1997 through 10 April 1997

ER -