Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

Kuan Hsien Liu, Ting Chang Chang, Kuan Chang Chang, Tsung Ming Tsai, Tien Yu Hsieh, Min Chen Chen, Bo Liang Yeh, Wu-Ching Chou

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32 Scopus citations

Abstract

This study investigates the electrical instability under negative gate bias stress (NGBS) induced by surface hydrolysis effect. Electrical characteristics exhibit instability for amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) under NGBS, in which on-current degradation and current crowding phenomenon can be observed. When the negative gate bias is applied on the TFT, hydrogen ions will dissociate from ZnO-H bonds and the dissociated hydrogen ions will cause electrical instability under NGBS. The ISE-Technology Computer Aided Design simulation tool and moisture partial pressure modulation measurement are utilized to clarify the anomalous degradation behavior.

Original languageEnglish
Article number103501
JournalApplied Physics Letters
Volume104
Issue number10
DOIs
StatePublished - 10 Mar 2014

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