Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

Dong Ru Hsieh, Kun Cheng Lin, Tien-Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures (TN) from 700 °C to 800 °C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION ), and enhancement of TEOS gate oxide breakdown E -field (EOBD). PG JAM TFTs by means of a proper channel doping concentration (Nch= 5 × 1018 cm-3) and a suitable TN (800 °C) exhibit a steep A.S.S. 96 mV/dec. and a large EOBD ∼ 12.1 MV/cm.

Original languageEnglish
Article number8630465
Pages (from-to)268-275
Number of pages8
JournalIEEE Journal of the Electron Devices Society
Volume7
DOIs
StatePublished - 1 Jan 2019

Keywords

  • 3-D integrated circuits (ICs)
  • Pi-gate (PG)
  • junctionless accumulation mode (JAM)
  • nitrous oxide (Nâ O)
  • poly-Si
  • reverse boron penetration

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