Investigation of NiSi fully-silicided gate on SiO2 and HfO 2 for applications in metal-oxide-semiconductor field-effect transistors

Chih Feng Huang*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Effective work function modulation (Φm,eff) and the thermal/electrical stability of NiSi fully-silicided (FUSI) gates on SiO 2 and HfO2 are investigated. A new method, implant-to-silicide, differing from the pre-doped method, is used to realize Φm,eff adjustments. The Φm,eff of NiSi FUSI gates on SiO2 can be tuned by incorporating BF2+ or P + dopants after silicidation. Nevertheless, the Fermi-pinning effect was observed in the NiSi/HfO2 gate which limits the Φm,eff adjustment. A thin SiO2 interfacial layer can reduce the Fermi-pinning effect. A NiSi FUSI gate on SiO2 is thermally stable up to 600°C. The thermal stress and impurity diffusion after a prolonged 600°C annealing degraded the oxide integration. The temperature of the post-silicidation process should be as low as possible to lessen the thermal stress and impurity diffusion.

Original languageEnglish
Pages (from-to)5702-5707
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number7
DOIs
StatePublished - 7 Jul 2006

Keywords

  • Fermi-pinning
  • FUSI gate
  • Metal gate
  • NiSi
  • Suicide

Fingerprint Dive into the research topics of 'Investigation of NiSi fully-silicided gate on SiO<sub>2</sub> and HfO <sub>2</sub> for applications in metal-oxide-semiconductor field-effect transistors'. Together they form a unique fingerprint.

Cite this