Investigation of multi-Vth efficiency for trigate GeOI p-MOSFETs using analytical solution of 3-D poisson's equation

Shu Hua Wu, Chang Hung Yu, Chun Hsien Chiang, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

This paper provides an analytical subthreshold model for trigate MOSFETs with thin buried oxide (BOX) for multithreshold (multi-Vth}) applications. This model shows a fairly good scalability in substrate bias and BOX thickness, which is crucial to the prediction of multi-Vth modulation through BOX. In addition, we demonstrate the application of our model in multi-Vth} device design for trigate GeOI p-MOSFETs with the body-effect coefficient (γ) over a wide range of design space efficiently examined. We have shown an enhanced multi-Vthmodulation behavior in trigate GeOI p-MOSFETs. Our study indicates that, for a given subthreshold swing and γ , the GeOI trigate p-MOSFET can possess a higher fin aspect ratio than the SOI counterpart.

Original languageEnglish
Article number6982209
Pages (from-to)88-93
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume62
Issue number1
DOIs
StatePublished - 1 Jan 2015

Keywords

  • GeOI
  • multi-Vth design
  • multigate MOSFET
  • SOI
  • subthreshold
  • trigate MOSFET.

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