Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application

Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Chen-Ming Hu, Yueh Chin Lin, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Use of the Mo/Ti/AlN/HfO2 metal/dielectric stack to increase the permittivity of HfO2 for low power consumption InGaAs-based MOSFET is investigated in this letter. The dielectric constant of HfO2 was found to increase by 47%, from 17 to 25, after Ti doping without affecting the interface trap density around the mid-gap of the MOSCAPs. A strong inversion behavior with low leakage current for the MOSCAP was also observed. The gate voltage needed to tune the Fermi level of InGaAs channel was found to be smaller for the Ti-doped HfO2 sample as compared with the sample with un-doped HfO2. The increase of the dielectric constant of HfO2 after Ti doping combined with the use of Ti gate metal, which has the work function level near the conduction band edge of InGaAs, makes the proposed Mo/Ti/HfO2 (Ti) stack ideal for future lowpower consumption InGaAs-based NMOS applications.

Original languageEnglish
Article number7888488
Pages (from-to)552-555
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number5
DOIs
StatePublished - 1 May 2017

Keywords

  • High mobility III-V semiconductor
  • Interface trap density
  • Metal/HfO
  • Mo/Ti gate stack
  • Ti doped HfO
  • interfacial passivation

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