Investigation of Low Temperature Cu Pillar Eutectic Bonding for 3D Chip Stacking Technology

Yi Chieh Tsai, Chia Hsuan Lee, Kuan Neng Chen*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, a chip level Cu pillar to In/Sn pad thermocompression bonding (TCB) structure was investigated. After reaching the target bonding force and the melting point of the pad, the In/Sn pad was in its liquid phase for a short time and then quickly diffused into the Cu pillar, which demonstrates that Cu-solder bonding with low bonding temperature (150 °C) and short bonding time (1 min) can be realized in atmospheric environment. These bonding results with good electrical performance and bonding quality show the potential of this chip level stacking process.

Original languageEnglish
Title of host publicationIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728148700
DOIs
StatePublished - Oct 2019
Event2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan
Duration: 8 Oct 201910 Oct 2019

Publication series

NameIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019

Conference

Conference2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
CountryJapan
CitySendai
Period8/10/1910/10/19

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