Investigation of low frequency noise in uniaxial strained PMOSFETs

Jack J Y Kuo, William P N Chen, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |Vgst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the SId/I d2 is increased by the enhanced gm/I d for the strained device. Nevertheless, the SId/I d2 of the strained device is almost the same as the unstrained one at a given gm/Id. Furthermore, with the application of uniaxial compressive strain, the attenuation length λ is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced λ may result in a smaller SVg. In the high |Vgst| regime, the 1/f noise is dominated by the mobility-fluctuations and the SId/Id2 is increased due to the larger Hooge parameter for the strained device.

Original languageEnglish
Title of host publication2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages82-83
Number of pages2
DOIs
StatePublished - 1 Dec 2009
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan
Duration: 27 Apr 200929 Apr 2009

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
CountryTaiwan
CityHsinchu
Period27/04/0929/04/09

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    Kuo, J. J. Y., Chen, W. P. N., & Su, P. (2009). Investigation of low frequency noise in uniaxial strained PMOSFETs. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 82-83). [5159301] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159301