Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p+-Si photodiodes

Cheng Pin Chen, Pei Hsuan Lin, Yen Jen Hung, Shao Shun Hsu, Liang Yi Chen, Yun Wei Cheng, Min Yung Ke, Ying Yuan Huang, Chun Hsiang Chang, Ching Hua Chiu, Hao-Chung Kuo, Jianjang Huang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p+-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p+-Si surface. As compared with the planar n-GZO/p+-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p+-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, the acceptance angle measurement reveals that the nanostructured photodiodes have larger acceptance angles than the planar structure. It also shows that the device with the nanocone structure has a higher acceptance angle than that with the nanorod structure.

Original languageEnglish
Article number215201
JournalNanotechnology
Volume21
Issue number21
DOIs
StatePublished - 10 May 2010

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