Investigation of lateral trap position by random telegraph signal analysis in moderate inversion in n-channel MOSFETs

Ching En Chen, Ting Chang Chang*, Bo You, Wen Hung Lo, Szu Han Ho, Chih Hao Dai, Jyun Yu Tsai, Hua Mao Chen, Guan Ru Liu, Ya-Hsiang Tai, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This paper investigates the trap position by random telegraph signal (RTS) analysis in moderate inversion in partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. In the diffusion current-dominated region, the electron concentration distribution is more non-uniform along the channel than the one in the drift current-dominated region. In the diffusion region, the application of drain (source) voltage can influence the potential at the drain (source) side only. Accordingly, the position of oxide trap can be further clarified using RTS measurements to compare both the capture times as well as the relative channel current amplitudes of devices with and without interchanged source/drain.

Original languageEnglish
JournalECS Solid State Letters
Volume2
Issue number11
DOIs
StatePublished - 2 Dec 2013

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