Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance

Shih En Huang, Shih Han Lin, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In0.53Ga0.47As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization Pr. In addition, the inversioncharge boosting for the In0.53Ga0.47As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In0.53Ga0.47As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.

Original languageEnglish
Article number8959139
Pages (from-to)105-109
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume8
DOIs
StatePublished - 14 Jan 2020

Keywords

  • CMOS
  • FinFET structure
  • InGaAs
  • Negative-capacitance FET (NCFET)
  • quantum capacitance

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