This paper presents an inversion capacitance-voltage (C-V) reconstruction method for long-channel metal oxide semiconductor field effect transistors (MOSFETs) using the BSIM4/SPICE and the intrinsic input resistance (R ii) model. The concept of Rii has been validated by segmented BSIM4/SPICE simulation. Since the Rii model is scalable with VGS and L, our Rii approach is physically accurate. Due to its simplicity, this method may provide an option for regular process monitoring purposes.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|State||Published - 24 Apr 2007|
- MOS capacitance
- Ultrathin gate oxide and intrinsic input resistance