By optimizing the inductively coupled plasma (ICP) oxidation condition, a thin oxide of 10 nm has been grown at 350°C to achieve excellent gate oxide integrity of low leakage current < 5 × 10-8 A/cm2 (at 8 MV/cm), high breakdown field of 9.3 MV/cm and low interface trap density of 1.5 × 1011/eV cm2. The superior performance poly-Si TFTs using such a thin ICP oxide were attained to achieve a high ON current of 110 μA/μm at VD = 1 V and VG = 5 V and the high electron field effect mobility of 231 cm2/V·s.
- Breakdown field
- Gate oxide
- Inductively coupled plasma (ICP)
- Leakage current
- Thin-film transistor (TFT)