Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs

Chang Ho Tseng*, Ting Kuo Chang, Fang Tsun Chu, Jia Min Shieh, Bau Tong Dai, Huang-Chung Cheng, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

16 Scopus citations

Abstract

By optimizing the inductively coupled plasma (ICP) oxidation condition, a thin oxide of 10 nm has been grown at 350°C to achieve excellent gate oxide integrity of low leakage current < 5 × 10-8 A/cm2 (at 8 MV/cm), high breakdown field of 9.3 MV/cm and low interface trap density of 1.5 × 1011/eV cm2. The superior performance poly-Si TFTs using such a thin ICP oxide were attained to achieve a high ON current of 110 μA/μm at VD = 1 V and VG = 5 V and the high electron field effect mobility of 231 cm2/V·s.

Original languageEnglish
Pages (from-to)333-335
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number6
DOIs
StatePublished - 1 Jun 2002

Keywords

  • Breakdown field
  • Gate oxide
  • Inductively coupled plasma (ICP)
  • Leakage current
  • Thin-film transistor (TFT)

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