Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers

J. S. Tsang*, C. P. Lee, D. C. Liu, H. R. Chen, K. L. Tsai, Chia-Ming Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The effect of indium doping in the graded-index regions of the InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non-In-doped lasers, it has little effect on In-doped lasers.

Original languageEnglish
Pages (from-to)4882-4885
Number of pages4
JournalJournal of Applied Physics
Volume74
Issue number8
DOIs
StatePublished - 1 Dec 1993

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