Investigation of Impact Ionization from InxGa1-xAs to InAs channel HEMTs for high speed and low power applications

Chien I. Kuo*, Heng-Tung Hsu, Edward Yi Chang, Chia Ta Chang, Chia Yuan Chang, Yasuyuki Miyamoto

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

80-nm high electron mobility transistors (HEMTs) with different Indium content in InxGa1-xAs channel from 52%, 70% to 100% have been fabricated. Device performances degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8V (InAs/In0.7Ga0.3As), > 1V (In 0.7Ga0.3As) and > 1.5V (In0.52Ga 0.48As), respectively. The impact ionization phenomenon should be avoided for high speed, low power application because it limits the highest drain bias of the device which in turn limits the drift velocity under specific applied electric field.

Original languageEnglish
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
StatePublished - 1 Dec 2008
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: 25 May 200829 May 2008

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period25/05/0829/05/08

Keywords

  • HEMTs
  • Impact ionization
  • InAs-channel
  • InGaAs-channel

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    Kuo, C. I., Hsu, H-T., Chang, E. Y., Chang, C. T., Chang, C. Y., & Miyamoto, Y. (2008). Investigation of Impact Ionization from InxGa1-xAs to InAs channel HEMTs for high speed and low power applications. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 [4702949] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2008.4702949