Investigation of hydration reaction-induced protons transport in etching-stop a-InGaZno thin-film transistors

Jhe Ciou Jhu, Ting Chang Chang, Kuan Chang Chang, Chung Yi Yang, Wu-Ching Chou, Cheng Hsu Chou, Wang Cheng Chung

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this letter, protons (hydrogen ions, H + ions) transport-induced unstable transient electrical characteristics were found and studied in the etching-stop-layer in via-contact-type amorphous-indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) for the first time. By applying negative gate bias stress, more water molecules will be absorbed on the surface of the passivation layer, and thus the transmission of net protons in the etching-stop will increase. The proton transport model established in this letter can effectively analyze the a-IGZO TFTs instability using the threshold voltage (V T ) determined from the current-voltage measurements, and which is unstable in a moist environment.

Original languageEnglish
Article number7182750
Pages (from-to)1050-1052
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number10
DOIs
StatePublished - 1 Oct 2015

Keywords

  • Thin film transistor
  • a-IGZO
  • oxide thin film transistor
  • proton transport

Fingerprint Dive into the research topics of 'Investigation of hydration reaction-induced protons transport in etching-stop a-InGaZno thin-film transistors'. Together they form a unique fingerprint.

Cite this