Investigation of hot-carrier stress effect on high-frequency performance of laterally diffused metal-oxide-semiconductor transistors

Kun Ming Chen*, Zong Wen Mou, Hao-Chung Kuo, Chia Sung Chiu, Bo Yuan Chen, Wen De Liu, Ming Yi Chen, Yu Chi Yang, Kai Li Wang, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal-oxide-semiconductor (LDMOS) transistors were investigated. A constant bias channel hot-carrier stress was applied at room temperature. After applying 3 h of hot-carrier stress, the on-resistance and saturation drain current degradations are 18 and 9%, respectively. However, the degradations of the cutoff frequency and maximum oscillation frequency were less than 2% when the devices were biased before the onset of quasi-saturation. In addition, we found that the degradations of high-frequency parameters are not related to the change in transconductance but to the changes in gate capacitances. Finally, S-parameter variations under hot-carrier stress were also examined in this study. The observations of S-parameter variations are important for RF power amplifier design.

Original languageEnglish
Article number02BC12
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 2
DOIs
StatePublished - 1 Feb 2012

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