@inproceedings{23067c62dc11446ca79c1241537b689d,
title = "Investigation of hot carrier degradation modes in LDMOS by using a novel three-region charge pumping technique",
abstract = " Hot carrier stress induced oxide degradation in n-LDMOS is investigated by using a novel three-region charge pumping technique. This technique allows us to locate oxide damage area in various stress modes and gain insight into trap creation properties. Our characterization shows that a max. I g stress causes a largest drain current and subthreshold slope degradation because of both interface trap (N it ) generation in the channel region and negative bulk oxide charge (Q ox ) creation in the bird's beak region. The density of N it and Q ox can be separately extracted from the proposed charge pumping method. A numerical device simulation is performed to confirm our result.",
keywords = "Charge pumping, LDMOS, Oxide damage regions, Trap density",
author = "Cheng, {C. C.} and Tu, {K. C.} and Ta-Hui Wang and Hsieh, {T. H.} and Tzeng, {J. T.} and Jong, {Y. C.} and Liou, {R. S.} and Pan, {Sam C.} and Hsu, {S. L.}",
year = "2006",
month = dec,
day = "1",
doi = "10.1109/RELPHY.2006.251239",
language = "English",
isbn = "0780394992",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "334--337",
booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",
note = "null ; Conference date: 26-03-2006 Through 30-03-2006",
}