Investigation of hot carrier degradation modes in LDMOS by using a novel three-region charge pumping technique

C. C. Cheng*, K. C. Tu, Ta-Hui Wang, T. H. Hsieh, J. T. Tzeng, Y. C. Jong, R. S. Liou, Sam C. Pan, S. L. Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

22 Scopus citations

Abstract

Hot carrier stress induced oxide degradation in n-LDMOS is investigated by using a novel three-region charge pumping technique. This technique allows us to locate oxide damage area in various stress modes and gain insight into trap creation properties. Our characterization shows that a max. I g stress causes a largest drain current and subthreshold slope degradation because of both interface trap (N it ) generation in the channel region and negative bulk oxide charge (Q ox ) creation in the bird's beak region. The density of N it and Q ox can be separately extracted from the proposed charge pumping method. A numerical device simulation is performed to confirm our result.

Original languageEnglish
Title of host publication2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages334-337
Number of pages4
DOIs
StatePublished - 1 Dec 2006
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States
Duration: 26 Mar 200630 Mar 2006

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CountryUnited States
CitySan Jose, CA
Period26/03/0630/03/06

Keywords

  • Charge pumping
  • LDMOS
  • Oxide damage regions
  • Trap density

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