Investigation of high-frequency noise characteristics in tensile-strained nMOSFETs

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Bo Yuan Chen, Guo Wei Huang, Cheng Chou Hung, Sheng Yi Huang, Cheng Wen Fan, Chih Yuh Tzeng, Sam Chou

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

For the first time, the high-frequency noise behavior of tensile-strained n-channel metaloxidesemiconductor field-effect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has better small-signal behaviors (higher ft and fmax ) and noise characteristics (smaller NFmin and R n) than the control device.

Original languageEnglish
Article number5719047
Pages (from-to)895-900
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume58
Issue number3
DOIs
StatePublished - 1 Mar 2011

Keywords

  • Metaloxidesemiconductor field-effect transistors (MOSFETs)
  • noise
  • radio frequency (RF)
  • temperature
  • tensile strained
  • van der Ziel model

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    Wang, S. C., Su, P., Chen, K. M., Chen, B. Y., Huang, G. W., Hung, C. C., Huang, S. Y., Fan, C. W., Tzeng, C. Y., & Chou, S. (2011). Investigation of high-frequency noise characteristics in tensile-strained nMOSFETs. IEEE Transactions on Electron Devices, 58(3), 895-900. [5719047]. https://doi.org/10.1109/TED.2010.2104153