Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides

Chun-Hu Cheng, Chia Chi Fan, Chien Liu, Hsiao-Hsuan Hsu, Hsuan Han Chen, Chih Chieh Hsu, Shih-An Wang, Chun-Yen Chang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this paper, we reported a ferroelectric HfAlOx negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlOx transistor with GS engineering percentage of I-ON enhancement and 27% V-T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlOx and stabilizing the NC effect, which shows the potential for the application of advanced technology node.
Original languageEnglish
Pages (from-to)1082-1086
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume66
Issue number2
DOIs
StatePublished - Feb 2019

Keywords

  • Ferroelectrics; gate stress (GS); negative capacitance (NC)
  • THIN-FILMS

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