Investigation of GaN LED with be-implanted Mg-doped GaN layer

Hung Wen Huang, C. C. Kao, J. T. Chu, Hao-Chung Kuo, S. C. Wang*, C. C. Yu, C. F. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 × 1018 cm-3 and low specific contact resistance value of 2.0 × 10-4 Ωcm2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process.

Original languageEnglish
Pages (from-to)19-23
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1
StatePublished - 15 Oct 2004


  • Gallium nitride (GaN)
  • Light emitting diode (LED)

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