Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

H. W. Huang*, C. H. Lin, J. K. Huang, K. Y. Lee, C. F. Lin, C. C. Yu, J. Y. Tsai, R. Hsueh, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

33 Scopus citations

Abstract

In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20 mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

Original languageEnglish
Pages (from-to)76-79
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume164
Issue number2
DOIs
StatePublished - 25 Aug 2009

Keywords

  • GaN
  • Light emitting diodes (LEDs)
  • Nano-hole patterned sapphire substrate (NHPSS)
  • Nano-imprint lithography (NIL)

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