Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

Shih En Huang, Chien Lin Yu, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This paper investigates the fin-width (WFin) sensitivity of threshold voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to WFin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the VTsensitivity to WFinfor NC-FinFETs. Our study may provide insights for future scaling of FinFETs.

Original languageEnglish
Article number8689074
Pages (from-to)2538-2543
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number6
DOIs
StatePublished - 1 Jun 2019

Keywords

  • CMOS
  • FinFET
  • InGaAs
  • negative-capacitance field-effect transistor (NCFET)
  • quantum confinement (QC)

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