Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates

Huei Min Huang*, Tien-chang Lu, Chiao Yun Chang, Yu-Pin Lan, Shih Chun Ling, Wei Wen Chan, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Non-polar (a-plane) InGaN/GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73×10 -2 to 2.58×10 -2 while the nanorod height in templates increases from 0 to 1.7 μm. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VII
Number of pages6
DOIs
StatePublished - Jan 2012
EventGallium Nitride Materials and Devices VII - San Francisco, CA, United States
Duration: 23 Jan 201226 Jan 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8262
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices VII
CountryUnited States
CitySan Francisco, CA
Period23/01/1226/01/12

Keywords

  • InGaN/GaN MQWs
  • Non-polar
  • optical polarization
  • strain

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