Investigation of emission polarization and strain in InGaN-GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates

Huei Min Huang*, Tien-chang Lu, Chiao Yun Chang, Shih Chun Ling, Wei Wen Chan, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 × 10 -2 to 2.58 × 10 -2 while the nanorod height in templates increases from 0 to 1.7 μm. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.

Original languageEnglish
Article number5983376
Pages (from-to)2761-2765
Number of pages5
JournalJournal of Lightwave Technology
Volume29
Issue number18
DOIs
StatePublished - 15 Sep 2011

Keywords

  • a-plane
  • InGaN-GaN MQWs
  • polarization
  • strain

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