Investigation of electrostatic integrity for ultrathin-body Germanium-on-nothing MOSFET

Vita Pi Ho Hu, Yu Sheng Wu, Pin Su

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poissons equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (TBI) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.

Original languageEnglish
Article number5404281
Pages (from-to)325-330
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume10
Issue number2
DOIs
StatePublished - 1 Mar 2011

Keywords

  • Electrostatic integrity
  • germanium
  • germanium-on-nothing (GeON)
  • Poissons equation
  • silicon-on-nothing (SON)
  • ultrathin body (UTB)

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