Abstract
This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poissons equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (TBI) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.
Original language | English |
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Article number | 5404281 |
Pages (from-to) | 325-330 |
Number of pages | 6 |
Journal | IEEE Transactions on Nanotechnology |
Volume | 10 |
Issue number | 2 |
DOIs | |
State | Published - 1 Mar 2011 |
Keywords
- Electrostatic integrity
- germanium
- germanium-on-nothing (GeON)
- Poissons equation
- silicon-on-nothing (SON)
- ultrathin body (UTB)