Investigation of electrostatic integrity for ultrathin-body Germanium-on-nothing MOSFET

Pi-Ho Hu; Yu Sheng Wu; Pin Su

doi:10.1109/TNANO.2010.2041010

Investigation of electrostatic integrity for ultrathin-body Germanium-on-nothing MOSFET

Pi-Ho Hu, Yu Sheng Wu, Pin Su

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poissons equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (L_g) to channel thickness (T_ch) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (T_BI) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.

Original language	English
Article number	5404281
Pages (from-to)	325-330
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	10
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2010.2041010
State	Published - 1 Mar 2011

Keywords

Electrostatic integrity
germanium
germanium-on-nothing (GeON)
Poissons equation
silicon-on-nothing (SON)
ultrathin body (UTB)

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Investigation of electrostatic integrity for ultrathin-body Germanium-on-nothing MOSFET

Abstract

Keywords

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