Investigation of electrostatic integrity for ultra-thin-body GeOI and InGaAs-OI n-MOSFETs considering quantum confinement

Chang Hung Yu*, Yu Sheng Wu, Vita Pi Ho Hu, Pin Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work examines the electrostatic integrity for UTB GeOI and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using derived analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that the QC effect improves the subthreshold swing of UTB devices. Since Ge, InGaAs, and Si channels exhibit different degree of quantum confinement due to different quantization effective mass, the impact of QC has to be considered when one-to-one comparisons among UTB GeOI, InGaAs-OI, and SOI MOSFETs regarding the subthreshold swing are made.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

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  • Cite this

    Yu, C. H., Wu, Y. S., Hu, V. P. H., & Su, P. (2011). Investigation of electrostatic integrity for ultra-thin-body GeOI and InGaAs-OI n-MOSFETs considering quantum confinement. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991651] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991651