Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation

Pi-Ho Hu*, Yu Sheng Wu, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

The electrostatic integrity for UTB GeOI MOSFETs is examined comprehensively by using an analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of the buried oxide thickness (TBOX) and back-gate bias () on the electrostatic integrity of GeOI devices is also examined.

Original languageEnglish
Article number045017
JournalSemiconductor Science and Technology
Volume24
Issue number4
DOIs
StatePublished - 24 Aug 2009

Fingerprint Dive into the research topics of 'Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation'. Together they form a unique fingerprint.

Cite this