Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation

Pi-Ho Hu; Yu Sheng Wu; Pin Su

doi:10.1088/0268-1242/24/4/045017

Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation

Pi-Ho Hu^*, Yu Sheng Wu, Pin Su

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The electrostatic integrity for UTB GeOI MOSFETs is examined comprehensively by using an analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (L_g) to channel thickness (T_ch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of the buried oxide thickness (T_BOX) and back-gate bias () on the electrostatic integrity of GeOI devices is also examined.

Original language	English
Article number	045017
Journal	Semiconductor Science and Technology
Volume	24
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/24/4/045017
State	Published - 24 Aug 2009

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abstract = "The electrostatic integrity for UTB GeOI MOSFETs is examined comprehensively by using an analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of the buried oxide thickness (TBOX) and back-gate bias () on the electrostatic integrity of GeOI devices is also examined.",

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AB - The electrostatic integrity for UTB GeOI MOSFETs is examined comprehensively by using an analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of the buried oxide thickness (TBOX) and back-gate bias () on the electrostatic integrity of GeOI devices is also examined.

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Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation

Abstract

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