@inproceedings{b1ddb5aec0e1424895c0410d9dd71931,
title = "Investigation of electrostatic discharge characteristics on low temperature polycrystalline silicon thin film transistors",
abstract = "The electrostatic discharge (ESD) characteristics in low temperature polycrystalline silicon (LTPS) thin film transistors (TTF) were investigated. It was found that LTPS TFT was damaged during ESD current. The LTPS TFT devices were fabricated on the glass substrate by using excimer laser annealing process. The current versus voltage (IV) characteristics of both n-channel and p-channel LTPS TFTs were also measured. The results show that the reduction of electro-migration effect improves ESD robustness for LTPS TFT protection circuits.",
author = "Lee, {Jam Wem} and Yi-Ming Li and Lin, {Hsiao Yi}",
year = "2004",
month = oct,
day = "24",
doi = "10.1109/IWCE.2004.1407377",
language = "English",
isbn = "0780386493",
series = "2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts",
pages = "163--164",
booktitle = "2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts",
note = "null ; Conference date: 24-10-2004 Through 27-10-2004",
}