Investigation of electrostatic discharge characteristics on low temperature polycrystalline silicon thin film transistors

Jam Wem Lee, Yi-Ming Li*, Hsiao Yi Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The electrostatic discharge (ESD) characteristics in low temperature polycrystalline silicon (LTPS) thin film transistors (TTF) were investigated. It was found that LTPS TFT was damaged during ESD current. The LTPS TFT devices were fabricated on the glass substrate by using excimer laser annealing process. The current versus voltage (IV) characteristics of both n-channel and p-channel LTPS TFTs were also measured. The results show that the reduction of electro-migration effect improves ESD robustness for LTPS TFT protection circuits.

Original languageEnglish
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages163-164
Number of pages2
DOIs
StatePublished - 24 Oct 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: 24 Oct 200427 Oct 2004

Publication series

Name2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Conference

Conference2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period24/10/0427/10/04

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