Investigation of electron-optical phonon interactions in moderate wide InxGa1-xAs/GaAs strained quantum wells

Sheng-Di Lin, H. C. Lee, Kien-Wen Sun*, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this presentation, we have calculated the electron-optical phonon scattering rate of GaAs/AlAs quantum wells and average electron energy loss rate as a function of well width of the GaAs/AlxGa1-xAs quantum wells. We have also studied the Raman and hot electron-neutral acceptor luminescence in moderate wide InxGa1-xAs/GaAs strained quantum wells (with 10 nm in well width and 30 nm in barrier width) to determine the dominant phonon mode emitted by the hot electrons in the wells at 15 K. The hot electron-neutral acceptor luminescence spectrum of the strained quantum well sample shows an oscillation period of about 22 meV which indicates that the hot electrons relaxed mostly through emissions of the InAs confined phonons.

Original languageEnglish
Pages (from-to)761-766
Number of pages6
JournalJournal of Luminescence
Volume94-95
DOIs
StatePublished - 1 Dec 2001

Keywords

  • Optical phonon
  • Photoluminescence
  • Strained quantum wells

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