Investigation of electrical pulse erasing method effect on current -voltage characteristics of organic bistable device

Po-Tsung Lee*, Tzu Yueh Chang, Szu Yuan Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical characteristics of the organic bistable devices with Al/Alq3/n-type Si structure with an electrical pulse erasing method are investigated. The bistable characteristic similar to that of metal/organic semiconductor/metal structure is demonstrated as well. Furthermore, generation of extra defects at both interfaces introduces variations on the electrical behaviors when erasing voltage conditions are applied on the organic bistable device. This device shows extremely easy fabrication processes and great potential in future advanced organic display.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages865-868
Number of pages4
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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    Lee, P-T., Chang, T. Y., & Chen, S. Y. (2007). Investigation of electrical pulse erasing method effect on current -voltage characteristics of organic bistable device. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (pp. 865-868). (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).