Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs

Yiming Li*, Hung Mu Chou, Jam Wem Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

96 Scopus citations


In this paper, electrical characteristics of small nanowire fin field-effect transistor (FinFET) are investigated by using a three-dimensional quantum correction simulation. Taking several important electrical characteristics as evaluation criteria, two different nanowire FinFETs, the surrounding-gate and omega-shaped-gate devices, are examined and compared with respect to different ratios of the gate coverage. By calculating the ratio of the on/off current, the turn-on resistance, subthreshold swing, drain-induced channel barrier height lowing, and gate capacitance, it is found that the difference of the electrical characteristics between the surrounding-gate (i.e., the omega-shaped-gate device with 100% coverage) and the omega-shaped-gate nanowire FinFET with 70% coverage is insignificant. The examination presented here is useful in the fabrication of small omega-shaped-gate nanowire FinFETs. It clarifies the main difference between the surrounding-gate and omega-shaped-gate nanowire FinFETs and exhibits a valuable result that the omega-shaped-gate device with 70% coverage plays an optimal candidate of the nanodevice structure when we consider both the device performance and manufacturability.

Original languageEnglish
Pages (from-to)510-516
Number of pages7
JournalIEEE Transactions on Nanotechnology
Issue number5
StatePublished - Sep 2005


  • Coverage ratio
  • Device structure
  • Fabrication
  • Fin field-effect transistor (FinFET)
  • Gate capacitance
  • Nanodevice
  • Nanowire
  • Omega-shaped-gate
  • On/off ratio
  • Process technique
  • Quantum correction model
  • Semiconductor devices
  • Subthreshold swing (SS)

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