Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

Po Min Tu*, Chun-Yen Chang, Shih Cheng Huang, Ching Hsueh Chiu, Jet Rung Chang, Wei Ting Chang, Dong Sing Wuu, Hsiao-Wen Zan, Chien-Chung Lin, Hao-Chung Kuo, Chih Peng Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers.

Original languageEnglish
Article number211107
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number21
DOIs
StatePublished - 23 May 2011

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