Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses

Chih Yi Yang, Tian-Li Wu, Tin En Hsieh, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we investigate the degradation phenomena in GaN-on-Si Metal-Insulator-Semiconductor High electron Mobility Transistors (MIS-HEMTs) in the cascode topography for enhancement mode power switching applications. Different stress conditions, e.g., constant source current (Is=100(μA)=2(mA/mm) and 100(nA)=2 × 10-3(mA/mm)) and drain voltages (Vd=1(V), 10(V), 100(V), and 200(V)), are used to investigate the source current and drain bias dependent degradation. First, the Vth shift is correlated with the Ron increase under a low drain bias stress (Vd<10(V)). However, under a high drain bias stress, the trapping location is most probably in the gate-to-drain access region, leading a different degradation phenomena compared to the case under a low drain bias stress. Furthermore, we found that the devices are stressed under a different source current stress show a similar degradation phenomenon. This suggests that, in the cascode circuit topology, the instability degradation is still mainly triggered by the drain bias.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesPWB.51-PWB.54
ISBN (Electronic)9781538654798
DOIs
StatePublished - 25 May 2018
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 11 Mar 201815 Mar 2018

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
CountryUnited States
CityBurlingame
Period11/03/1815/03/18

Keywords

  • current stress condition
  • degradation
  • GaN-on-Si
  • MIS-HEMT
  • trapping

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