@inproceedings{281e7db448684dda9ad3a0cb2da52f28,
title = "Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method",
abstract = "Data pattern effects on nitride charge lateral migration and Vt retention loss in a charge trap flash memory is investigated. We use channel hot electron program and band-to-band tunneling hot hole erase to inject different amounts of electrons and holes at the two sides of a channel in a SONOS cell. An interface oxide trap near an injected charge packet and its associated random telegraph signal (RTS) are used as an internal probe to detect a local channel potential change resulting from trapped charge lateral migration. Vt retention loss and RTS in various charge storage patterns are characterized and analyzed. At a similar built-in electric field, nitride trapped holes are found to be more mobile than trapped electrons in lateral migration.",
keywords = "charge lateral migration, charge trap memory, data pattern effect, random telegraph signal",
author = "Liu, {Y. H.} and Lin, {H. Y.} and Jiang, {C. M.} and Ta-Hui Wang and Tsai, {W. J.} and Lu, {T. C.} and Chen, {K. C.} and Lu, {Chih Yuan}",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353632",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6D.11--6D.15",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
address = "United States",
note = "null ; Conference date: 11-03-2018 Through 15-03-2018",
}