Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method

Y. H. Liu, H. Y. Lin, C. M. Jiang, Ta-Hui Wang, W. J. Tsai, T. C. Lu, K. C. Chen, Chih Yuan Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Data pattern effects on nitride charge lateral migration and Vt retention loss in a charge trap flash memory is investigated. We use channel hot electron program and band-to-band tunneling hot hole erase to inject different amounts of electrons and holes at the two sides of a channel in a SONOS cell. An interface oxide trap near an injected charge packet and its associated random telegraph signal (RTS) are used as an internal probe to detect a local channel potential change resulting from trapped charge lateral migration. Vt retention loss and RTS in various charge storage patterns are characterized and analyzed. At a similar built-in electric field, nitride trapped holes are found to be more mobile than trapped electrons in lateral migration.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6D.11-6D.15
ISBN (Electronic)9781538654798
DOIs
StatePublished - 25 May 2018
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 11 Mar 201815 Mar 2018

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
CountryUnited States
CityBurlingame
Period11/03/1815/03/18

Keywords

  • charge lateral migration
  • charge trap memory
  • data pattern effect
  • random telegraph signal

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