Investigation of Coulomb mobility in nanoscale strained PMOSFETs

William Po Nien Chen, Pin Su, Ken Ichi Goto

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


This paper provides an experimental assessment of Coulomb scattering mobility for advanced strained devices. By accurate short-channel mobility extraction, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel pMOSFETs. Our extracted Coulomb mobility shows very weak stress dependency at room temperature. This finding has also been verified in both long- and short-channel devices by the fourpoint wafer bending measurement. Therefore, in order to maximize the process-induced strain efficiency on nanoscale pMOSFETs, lower surface impurity concentration is suggested to avoid the Coulomb mobility domination in carrier transport.

Original languageEnglish
Article number4607236
Pages (from-to)538-543
Number of pages6
JournalIEEE Transactions on Nanotechnology
Issue number5
StatePublished - 1 Sep 2008


  • Coulomb mobility
  • Strained silicon

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