Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

Jie Hu; Steve Stoffels; Silvia Lenci; Tian-Li Wu; Nicolò Ronchi; Shuzhen You; Benoit Bakeroot; Guido Groeseneken; Stefaan Decoutere

doi:10.7567/JJAP.54.04DF07

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

Jie Hu^*, Steve Stoffels, Silvia Lenci, Tian-Li Wu, Nicolò Ronchi, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this work, we perform an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (V_AC = -100 V) off-state stress conditions. The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to electron-trapping occurring in the vicinity of the Schottky contact. Capacitance-voltage (C-V) measurements confirm an increase of the barrier height and the on-resistance of the stressed device. Furthermore, the on-resistance increase has been studied with different temperatures and stressing times. By TCAD simulations, a lateral extension of the "trapped region" at the AlGaN/Si₃N₄ interface has been visualized and can qualitatively explain the phenomenon of higher on-resistance increase at higher temperatures.

Original language	English
Article number	04DF07
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	4
DOIs	https://doi.org/10.7567/JJAP.54.04DF07
State	Published - 1 Apr 2015

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title = "Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes",

abstract = "In this work, we perform an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (VAC = -100 V) off-state stress conditions. The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to electron-trapping occurring in the vicinity of the Schottky contact. Capacitance-voltage (C-V) measurements confirm an increase of the barrier height and the on-resistance of the stressed device. Furthermore, the on-resistance increase has been studied with different temperatures and stressing times. By TCAD simulations, a lateral extension of the {"}trapped region{"} at the AlGaN/Si3N4 interface has been visualized and can qualitatively explain the phenomenon of higher on-resistance increase at higher temperatures.",

author = "Jie Hu and Steve Stoffels and Silvia Lenci and Tian-Li Wu and Nicol{\`o} Ronchi and Shuzhen You and Benoit Bakeroot and Guido Groeseneken and Stefaan Decoutere",

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doi = "10.7567/JJAP.54.04DF07",

language = "English",

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Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes. / Hu, Jie; Stoffels, Steve; Lenci, Silvia; Wu, Tian-Li; Ronchi, Nicolò; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan.

In: Japanese Journal of Applied Physics, Vol. 54, No. 4, 04DF07, 01.04.2015.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

AU - Hu, Jie

AU - Stoffels, Steve

AU - Lenci, Silvia

AU - Wu, Tian-Li

AU - Ronchi, Nicolò

AU - You, Shuzhen

AU - Bakeroot, Benoit

AU - Groeseneken, Guido

AU - Decoutere, Stefaan

PY - 2015/4/1

Y1 - 2015/4/1

N2 - In this work, we perform an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (VAC = -100 V) off-state stress conditions. The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to electron-trapping occurring in the vicinity of the Schottky contact. Capacitance-voltage (C-V) measurements confirm an increase of the barrier height and the on-resistance of the stressed device. Furthermore, the on-resistance increase has been studied with different temperatures and stressing times. By TCAD simulations, a lateral extension of the "trapped region" at the AlGaN/Si3N4 interface has been visualized and can qualitatively explain the phenomenon of higher on-resistance increase at higher temperatures.

AB - In this work, we perform an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (VAC = -100 V) off-state stress conditions. The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to electron-trapping occurring in the vicinity of the Schottky contact. Capacitance-voltage (C-V) measurements confirm an increase of the barrier height and the on-resistance of the stressed device. Furthermore, the on-resistance increase has been studied with different temperatures and stressing times. By TCAD simulations, a lateral extension of the "trapped region" at the AlGaN/Si3N4 interface has been visualized and can qualitatively explain the phenomenon of higher on-resistance increase at higher temperatures.

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