Investigation of charge loss in cycled NBit cells via field and temperature accelerations

W. J. Tsai*, N. K. Zous, H. Y. Chen, Lenvis Liu, C. C. Yeh, Sam Chen, W. P. Lu, Ta-Hui Wang, Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

In nitride storage flash memories, the high-VT state retention loss induced by field and temperature acceleration is compared between single cells and products. Our result reveals that the charge loss path is the same no matter which accelerating methods is used. The traps created at the bottom oxide during P/E cycling provide such leak paths. In addition, the annealing of interface states would play a role in the VT loss during high-temperature bake.

Original languageEnglish
Title of host publication2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages693-694
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States
Duration: 26 Mar 200630 Mar 2006

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CountryUnited States
CitySan Jose, CA
Period26/03/0630/03/06

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