Investigation of charge loss in cycled NBit cells via field and temperature accelerations

W. J. Tsai; N. K. Zous; H. Y. Chen; Lenvis Liu; C. C. Yeh; Sam Chen; W. P. Lu; Ta-Hui Wang; Joseph Ku; Chih Yuan Lu

doi:10.1109/RELPHY.2006.251328

Investigation of charge loss in cycled NBit cells via field and temperature accelerations

W. J. Tsai^*, N. K. Zous, H. Y. Chen, Lenvis Liu, C. C. Yeh, Sam Chen, W. P. Lu, Ta-Hui Wang, Joseph Ku, Chih Yuan Lu

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

In nitride storage flash memories, the high-V_T state retention loss induced by field and temperature acceleration is compared between single cells and products. Our result reveals that the charge loss path is the same no matter which accelerating methods is used. The traps created at the bottom oxide during P/E cycling provide such leak paths. In addition, the annealing of interface states would play a role in the VT loss during high-temperature bake.

Original language	English
Title of host publication	2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages	693-694
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2006.251328
State	Published - 1 Dec 2006
Event	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States Duration: 26 Mar 2006 → 30 Mar 2006

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
Country	United States
City	San Jose, CA
Period	26/03/06 → 30/03/06

Access to Document

10.1109/RELPHY.2006.251328

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Tsai, W. J., Zous, N. K., Chen, H. Y., Liu, L., Yeh, C. C., Chen, S., Lu, W. P., Wang, T-H., Ku, J., & Lu, C. Y. (2006). Investigation of charge loss in cycled NBit cells via field and temperature accelerations. In 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual (pp. 693-694). [4017269] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2006.251328

Tsai, W. J. ; Zous, N. K. ; Chen, H. Y. ; Liu, Lenvis ; Yeh, C. C. ; Chen, Sam ; Lu, W. P. ; Wang, Ta-Hui ; Ku, Joseph ; Lu, Chih Yuan. / Investigation of charge loss in cycled NBit cells via field and temperature accelerations. 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. pp. 693-694 (IEEE International Reliability Physics Symposium Proceedings).

@inproceedings{f19f4c08c78e445bb458c9a79b5c410b,

title = "Investigation of charge loss in cycled NBit cells via field and temperature accelerations",

abstract = "In nitride storage flash memories, the high-VT state retention loss induced by field and temperature acceleration is compared between single cells and products. Our result reveals that the charge loss path is the same no matter which accelerating methods is used. The traps created at the bottom oxide during P/E cycling provide such leak paths. In addition, the annealing of interface states would play a role in the VT loss during high-temperature bake.",

author = "Tsai, {W. J.} and Zous, {N. K.} and Chen, {H. Y.} and Lenvis Liu and Yeh, {C. C.} and Sam Chen and Lu, {W. P.} and Ta-Hui Wang and Joseph Ku and Lu, {Chih Yuan}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/RELPHY.2006.251328",

language = "English",

isbn = "0780394992",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "693--694",

booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",

note = "null ; Conference date: 26-03-2006 Through 30-03-2006",

}

Tsai, WJ, Zous, NK, Chen, HY, Liu, L, Yeh, CC, Chen, S, Lu, WP, Wang, T-H, Ku, J & Lu, CY 2006, Investigation of charge loss in cycled NBit cells via field and temperature accelerations. in 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual., 4017269, IEEE International Reliability Physics Symposium Proceedings, pp. 693-694, 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, San Jose, CA, United States, 26/03/06. https://doi.org/10.1109/RELPHY.2006.251328

Investigation of charge loss in cycled NBit cells via field and temperature accelerations. / Tsai, W. J.; Zous, N. K.; Chen, H. Y.; Liu, Lenvis; Yeh, C. C.; Chen, Sam; Lu, W. P.; Wang, Ta-Hui; Ku, Joseph; Lu, Chih Yuan.

2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 693-694 4017269 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of charge loss in cycled NBit cells via field and temperature accelerations

AU - Tsai, W. J.

AU - Zous, N. K.

AU - Chen, H. Y.

AU - Liu, Lenvis

AU - Yeh, C. C.

AU - Chen, Sam

AU - Lu, W. P.

AU - Wang, Ta-Hui

AU - Ku, Joseph

AU - Lu, Chih Yuan

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In nitride storage flash memories, the high-VT state retention loss induced by field and temperature acceleration is compared between single cells and products. Our result reveals that the charge loss path is the same no matter which accelerating methods is used. The traps created at the bottom oxide during P/E cycling provide such leak paths. In addition, the annealing of interface states would play a role in the VT loss during high-temperature bake.

AB - In nitride storage flash memories, the high-VT state retention loss induced by field and temperature acceleration is compared between single cells and products. Our result reveals that the charge loss path is the same no matter which accelerating methods is used. The traps created at the bottom oxide during P/E cycling provide such leak paths. In addition, the annealing of interface states would play a role in the VT loss during high-temperature bake.

UR - http://www.scopus.com/inward/record.url?scp=34250738903&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2006.251328

DO - 10.1109/RELPHY.2006.251328

M3 - Conference contribution

AN - SCOPUS:34250738903

SN - 0780394992

SN - 0780394984

SN - 9780780394988

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 693

EP - 694

BT - 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual

Y2 - 26 March 2006 through 30 March 2006

ER -