@inproceedings{f19f4c08c78e445bb458c9a79b5c410b,
title = "Investigation of charge loss in cycled NBit cells via field and temperature accelerations",
abstract = "In nitride storage flash memories, the high-VT state retention loss induced by field and temperature acceleration is compared between single cells and products. Our result reveals that the charge loss path is the same no matter which accelerating methods is used. The traps created at the bottom oxide during P/E cycling provide such leak paths. In addition, the annealing of interface states would play a role in the VT loss during high-temperature bake.",
author = "Tsai, {W. J.} and Zous, {N. K.} and Chen, {H. Y.} and Lenvis Liu and Yeh, {C. C.} and Sam Chen and Lu, {W. P.} and Ta-Hui Wang and Joseph Ku and Lu, {Chih Yuan}",
year = "2006",
month = dec,
day = "1",
doi = "10.1109/RELPHY.2006.251328",
language = "English",
isbn = "0780394992",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "693--694",
booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",
note = "null ; Conference date: 26-03-2006 Through 30-03-2006",
}