Investigation of characteristics of Al2O3/n-In x Ga1-x As (x=0.53, 0.7, and 1) metal-oxide-semiconductor structures

Hai Dang Trinh, Yueh Chin Lin, Chien I. Kuo, Edward Yi Chang, Hong Quan Nguyen, Yuen Yee Wong, Chih Chieh Yu, Chi Ming Chen, Chia Yuan Chang, Jyun Yi Wu, Han Chin Chiu, Terrence Yu, Hui Cheng Chang, Joseph Tsai, David Hwang

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Abstract

The electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.

Original languageEnglish
Pages (from-to)2439-2444
Number of pages6
JournalJournal of Electronic Materials
Volume42
Issue number8
DOIs
StatePublished - 1 Aug 2013

Keywords

  • ALD AlO
  • InAs
  • InGaAs
  • MOSCAPs
  • surface treatment

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    Trinh, H. D., Lin, Y. C., Kuo, C. I., Chang, E. Y., Nguyen, H. Q., Wong, Y. Y., Yu, C. C., Chen, C. M., Chang, C. Y., Wu, J. Y., Chiu, H. C., Yu, T., Chang, H. C., Tsai, J., & Hwang, D. (2013). Investigation of characteristics of Al2O3/n-In x Ga1-x As (x=0.53, 0.7, and 1) metal-oxide-semiconductor structures. Journal of Electronic Materials, 42(8), 2439-2444. https://doi.org/10.1007/s11664-013-2616-x